Hiroshima University and STARC (Semiconductor Technology Academic Research Center) are jointly developing the new MOSFET model HiSIM, which is now one of the 4 candidates considered for the next generation standard MOSFET model by the Compact Model Council (CMC, URL http://www.eigroup.org/cmc/). CMC is an international organization, based in the United States of America and engaged in the international standardization of compact models for circuit simulation since about 10 years.
Recently, CMC provided requirements for quality evaluation of the 4 candidate models, and chief model developers presented their results at the CMC meeting held on March 14 and 15, 2005 in Seattle, USA. Prof. Miura from Hiroshima University presented the HiSIM results with respect to these quality requirements, which proved the high quality of the HiSIM model. In particular, the physical consistency of HiSIM could be clearly demonstrated. This consistency allows the accurate reproduction all features of advanced MOSFET operation and functionality. Even conclusions on the applied technology for MOSET fabrication are possible from the analysis of just the current-voltage characteristic of the measured MOSFETs.
CMC member organizations will finally select one of the 4 candidate models (HiSIM, BSIM, EKV, PSP) as the next generation standard MOSFET model through this quality evaluation and a two phase voting process. During the evaluation process, some of the CMC member organizations are acting as sponsors and support the evaluation for specific models which they favour. The HiSIM model is sponsored by several CMC member companies. These supporting companies share our newest model-development results, which are disclosed only for CMC model evaluation use under a non disclosure agreement.
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